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YJSD04N06C

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The YJSD04N06C from Yangjie Electronic Technology is a MOSFET with Continous Drain Current 4 A, Drain Source Resistance 55 to 90 milliohm, Drain Source Breakdown Voltage 60 V, Gate Source Voltage -20 to 20 V, Gate Source Threshold Voltage 0.9 to 2 V. Tags: Surface Mount. More details for YJSD04N06C can be seen below.

Product Specifications

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Product Details

  • Part Number
    YJSD04N06C
  • Manufacturer
    Yangjie Electronic Technology
  • Description
    60 V, N-Channel Enhancement Mode MOSFET

General

  • Types of MOSFET
    N-Channel Enhancement Mode
  • Transistor Polarity
    N-Channel
  • Number of Channels
    Dual
  • Continous Drain Current
    4 A
  • Drain Source Resistance
    55 to 90 milliohm
  • Drain Source Breakdown Voltage
    60 V
  • Gate Source Voltage
    -20 to 20 V
  • Gate Source Threshold Voltage
    0.9 to 2 V
  • Gate Charge
    9 nC
  • Power Dissipation
    1.6 W
  • Temperature operating range
    -55 to 150 Degree C
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Package Type
    Surface Mount
  • Package
    SOP-8
  • Applications
    Power switching application, Uninterruptible power supply, Load switch

Technical Documents
View details on the manufacturer's website
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