Note : Your request will be directed to Bourns.
The Silicon Carbide (SiC) Schottky Barrier Diodes from Bourns is a Power Diode with Forward Current 5 to 10 A, Forward Voltage 1.29 to 1.45 V. Tags: Through Hole. More details for Silicon Carbide (SiC) Schottky Barrier Diodes can be seen below.
700 V AEC-Q101 Qualified Recovery Rectifier
TVS Diode for CAN and FlexRay Applications
29.5 V Bi-Directional TVS Diode
You can now find similar products from multiple companies on everything RF.
Our Newsletter will keep you up to date with the Power Electronics Industry.
By signing up for our newsletter you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Create an account on everything PE to get a range of benefits.
By creating an account with us you agree to our Terms of Service and acknowledge receipt of our Privacy Policy.
Login to everything PE to download datasheets, white papers and more content.
Fill the form to Download the Media Kit.
Fill the form to Download the Media Kit
Processing...Please wait.
