The SDM4A40EP3 from Diodes Incorporated is a Schottky Barrier Diode that is optimized to provide a low forward voltage and low leakage current. It has a forward voltage of up to 610 mV and an average rectified output current of less than 4 A. This power diode has a peak repetitive reverse voltage of 40 V and a reverse current of up to 150 µA. It has a total power dissipation of 2.2 W. This power diode has a low forward voltage that minimizes conduction losses and improves efficiency. It offers increased reliability against thermal runaway failure under high temperature operating conditions. This power diode has a low thermal resistance that enables designers to simultaneously meet the design challenges of increasing efficiency as well as reducing the board space. It is fabricated using patent-pending innovative cathode design and manufacturing processes.

This RoHS-compliant power diode is available as a surface mount package that measures 1.28 x 1.28 mm and is ideal for portable applications such as blocking diodes, boost diodes, switching diodes and reverse protection diodes.