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GB05MPS33-263

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GB05MPS33-263 Image

The GB05MPS33-263 from GeneSiC Semiconductor is a Power Diode with Forward Current 5 to 11 A, Forward Voltage 2.4 to 5.5 V, Reverse Current 1 to 30 uA, Reverse Voltage 3300 V, Repetitive Peak Reverse Voltage 3300 V. Tags: Surface Mount. More details for GB05MPS33-263 can be seen below.

Product Specifications

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Product Details

  • Part Number
    GB05MPS33-263
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    2.4 to 5.5 V Schottky Barrier Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    5 to 11 A
  • Forward Voltage
    2.4 to 5.5 V
  • Reverse Current
    1 to 30 uA
  • Reverse Voltage
    3300 V
  • Repetitive Peak Reverse Voltage
    3300 V
  • Non-Repetitive Peak Forward Current
    40 to 50 A
  • Peak Reverse Voltage
    3300 V
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Reverse Breakdown Voltage
    3300 V
  • Applications
    Medical Imaging, High Voltage Sensing, Oil Driling, Geothermal Instrumentation, High Voltage Multipiles, High Frequencey Rectifiers.
  • Package Type
    Surface Mount
  • Package
    TO-263-7
  • Total Capacitance
    14 to 279 pF

Technical Documents
View details on the manufacturer's website
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