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GC50MPS33H

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GC50MPS33H Image

The GC50MPS33H from GeneSiC Semiconductor is a Power Diode with Forward Current 40 to 75 A, Forward Voltage 1.95 to 3.7 V, Reverse Current 10 to 200 uA, Reverse Voltage 3300 V, Repetitive Peak Reverse Voltage 3300 V. Tags: Through Hole. More details for GC50MPS33H can be seen below.

Product Specifications

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Product Details

  • Part Number
    GC50MPS33H
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    1.95 to 3.7 V Schottky Barrier Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    40 to 75 A
  • Forward Voltage
    1.95 to 3.7 V
  • Reverse Current
    10 to 200 uA
  • Reverse Voltage
    3300 V
  • Repetitive Peak Reverse Voltage
    3300 V
  • Non-Repetitive Peak Forward Current
    400 to 500 A
  • Peak Reverse Voltage
    3300 V
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Reverse Breakdown Voltage
    3300 V
  • Applications
    EV Fast Chargers, 1500V Soalar inverters, Pulsed Power, HVDC and Grid- Converters, Industrial power Supply, Motor Traction, Medical Imaging.
  • Package Type
    Through Hole
  • Package
    TO-247-2
  • Total Capacitance
    150 to 3480 pF

Technical Documents
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