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GD2X100MPS12N

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GD2X100MPS12N Image

The GD2X100MPS12N from GeneSiC Semiconductor is a Power Diode with Forward Current 100 to 272 A, Forward Voltage 1.5 to 1.9 V, Reverse Current 5 to 65 uA, Reverse Voltage 1200 V, Repetitive Peak Reverse Voltage 1200 V. Tags: Surface Mount. More details for GD2X100MPS12N can be seen below.

Product Specifications

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Product Details

  • Part Number
    GD2X100MPS12N
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    1.5 to 1.9 V Schottky Barrier Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Dual Diode
  • Technology
    SiC
  • Forward Current
    100 to 272 A
  • Forward Voltage
    1.5 to 1.9 V
  • Reverse Current
    5 to 65 uA
  • Reverse Voltage
    1200 V
  • Repetitive Peak Reverse Voltage
    1200 V
  • Non-Repetitive Peak Forward Current
    800 to 1000 A
  • Peak Reverse Voltage
    1200 V
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Reverse Breakdown Voltage
    1200 V
  • Applications
    Electric Vehicles and Fast chargers, Solar Inverters, Train Auxiliary power Supplies, High Frequency Converters, Motor Drives, Induction Heating And Welding, Pulsed Power.
  • Package Type
    Surface Mount
  • Package
    SOT-227
  • Total Capacitance
    215 to 3670 pF

Technical Documents
View details on the manufacturer's website
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