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GE2X8MPS06D

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GE2X8MPS06D Image

The GE2X8MPS06D from GeneSiC Semiconductor is a Power Diode with Forward Current 8 to 34 A, Forward Voltage 1.4 to 1.75 V, Reverse Current 1 to 155 uA, Reverse Voltage 650 V, Repetitive Peak Reverse Voltage 650 V. Tags: Through Hole. More details for GE2X8MPS06D can be seen below.

Product Specifications

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Product Details

  • Part Number
    GE2X8MPS06D
  • Manufacturer
    GeneSiC Semiconductor
  • Description
    1.4 to 1.75 V Schottky Barrier Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Dual Diode
  • Technology
    SiC
  • Forward Current
    8 to 34 A
  • Forward Voltage
    1.4 to 1.75 V
  • Reverse Current
    1 to 155 uA
  • Reverse Voltage
    650 V
  • Repetitive Peak Reverse Voltage
    650 V
  • Non-Repetitive Peak Forward Current
    44 to 56 A
  • Peak Reverse Voltage
    650 V
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Reverse Breakdown Voltage
    650 V
  • Applications
    Switched Mode Power Supply, Solar Inverter, Server and Telecom Power Supply, Battery Charger, Uninterruptible Power Supply
  • Package Type
    Through Hole
  • Package
    TO-247-3
  • Total Capacitance
    26 to 373 pF

Technical Documents
View details on the manufacturer's website
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