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BAS40-T1 (P)

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BAS40-T1 (P) Image

The BAS40-T1 (P) from Infineon Technologies is a Power Diode with Dynamic Resistance 8 to 12 ohm, Forward Current 0.12 A, Forward Voltage 0.29 to 0.85 V, Reverse Current 0.1 to 2 uA, Reverse Voltage 40 V. Tags: Stud Mount. More details for BAS40-T1 (P) can be seen below.

Product Specifications

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Product Details

  • Part Number
    BAS40-T1 (P)
  • Manufacturer
    Infineon Technologies
  • Description
    0.29 to 0.85 V, 0.12 A, Schottky Barrier Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Dynamic Resistance
    8 to 12 ohm
  • Forward Current
    0.12 A
  • Forward Voltage
    0.29 to 0.85 V
  • Reverse Current
    0.1 to 2 uA
  • Reverse Voltage
    40 V
  • Non-Repetitive Peak Forward Current
    0.17 A
  • Industry
    Space
  • Temperature operating range
    -55 to 150 Degree C
  • Reverse Breakdown Voltage
    40 V
  • Applications
    General-purpose diodes for high-speed switching, Circuit Protection, Voltage Clamping, High-level detecting and mixing, Hermetically Sealed Microwave package.
  • Package Type
    Stud Mount
  • Total Capacitance
    2.4 to 4.0 pF

Technical Documents
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