HFB35HB20

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HFB35HB20 Image

The HFB35HB20 from Infineon Technologies is an Ultrafast Recovery Diode that is ideal for DC-DC converter and motor drive applications. It has a forward voltage of 1.41 V and a forward current of up to 35 A. This MIL-PRF-19500-qualified diode has a repetitive peak reverse voltage of less than 200 V and a reverse current of up to 3.3 A. It is optimized to reduce losses and EMI/RFI in high-frequency power conditioning systems and is designed such that the recovery behavior for different values of current, temperature, and di/dt simplifies the calculations of losses in the operating conditions thereby eliminating the need for a snubber in most applications. This power diode is available in a hermetically sealed, through-hole package that measures 33.02 x 13.59 mm and is suitable for power converters, motor drives, and other applications where switching losses are a significant portion of the total losses.

Product Specifications

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Product Details

  • Part Number
    HFB35HB20
  • Manufacturer
    Infineon Technologies
  • Description
    200 V Ultrafast Recovery Diode for Space Applications

General

  • Types of Diode
    Fast Recovery Diode
  • Configuration of Diode
    Single Diode
  • Forward Current
    35 A
  • Forward Voltage
    1.41 V
  • Reverse Current
    3.3 A
  • Reverse Voltage
    200 V
  • Repetitive Peak Reverse Voltage
    200 V
  • Non-Repetitive Peak Forward Current
    150 A
  • Recovery Time
    35 to 68 ns
  • Industry
    Space
  • Qualification
    MIL-PRF-19500
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 150 Degree C
  • Reverse Breakdown Voltage
    200 V
  • Applications
    Reduced RFI and EMI, Reduced Snubbing, Extensive Characterization of Recovery Parameters, Hermetic
  • Dimensions
    33.02 x 13.59 mm
  • Package Type
    Through Hole
  • Package
    TO-254AA
  • Total Capacitance
    200 pF

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