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HFB35HB20C

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The HFB35HB20C from Infineon Technologies is a Power Diode with Forward Current 35 A, Forward Voltage 1.0 to 1.4 V, Reverse Current 10 to 50 uA, Reverse Voltage 200 V, Repetitive Peak Reverse Voltage 200 V. Tags: Through Hole. More details for HFB35HB20C can be seen below.

Product Specifications

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Product Details

  • Part Number
    HFB35HB20C
  • Manufacturer
    Infineon Technologies
  • Description
    1.0 to 1.4 V, 35 A, Fast Recovery Diode

General

  • Types of Diode
    Fast Recovery Diode
  • Configuration of Diode
    Dual Diode
  • Forward Current
    35 A
  • Forward Voltage
    1.0 to 1.4 V
  • Reverse Current
    10 to 50 uA
  • Reverse Voltage
    200 V
  • Repetitive Peak Reverse Voltage
    200 V
  • Non-Repetitive Peak Forward Current
    150 A
  • Recovery Time
    28 to 46 ns
  • Industry
    Space
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 150 Degree C
  • Reverse Breakdown Voltage
    200 V
  • Applications
    Reduced RFI and EMI, Reduced Snubbing, Extensive Characterization of Recovery Parameters, Hermetic, Surgace Mount
  • Package Type
    Through Hole
  • Package
    TO-254AA
  • Total Capacitance
    150 pF

Technical Documents
View details on the manufacturer's website
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