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IDB30E60

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IDB30E60 Image

The IDB30E60 from Infineon Technologies is a Power Diode with Forward Current 30 to 52.3 A, Forward Voltage 1.5 V, Repetitive Peak Reverse Voltage 600 V, Non-Repetitive Peak Forward Current 117 A, Recovery Time 126 nS. Tags: Through Hole. More details for IDB30E60 can be seen below.

Product Specifications

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Product Details

  • Part Number
    IDB30E60
  • Manufacturer
    Infineon Technologies
  • Description
    650 V Emitter Controlled Silicon Diode

General

  • Types of Diode
    Silicon Diode
  • Configuration of Diode
    Single Diode
  • Forward Current
    30 to 52.3 A
  • Forward Voltage
    1.5 V
  • Repetitive Peak Reverse Voltage
    600 V
  • Non-Repetitive Peak Forward Current
    117 A
  • Recovery Time
    126 nS
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    Motor control and drives
  • Package Type
    Through Hole
  • Package
    PG-TO263-3

Technical Documents
View details on the manufacturer's website
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