IDFW40E65D1E

Note : Your request will be directed to Infineon Technologies.

IDFW40E65D1E Image

The IDFW40E65D1E from Infineon Technologies is a Power Diode with Forward Current 35 to 42 A, Forward Voltage 1.7 to 2.1 V, Repetitive Peak Reverse Voltage 650 V, Non-Repetitive Peak Forward Current 120 A, Recovery Time 76 nS. Tags: Through Hole. More details for IDFW40E65D1E can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    IDFW40E65D1E
  • Manufacturer
    Infineon Technologies
  • Description
    1200 V Emitter Controlled Silicon Diode

General

  • Types of Diode
    Silicon Diode
  • Configuration of Diode
    Single Diode
  • Forward Current
    35 to 42 A
  • Forward Voltage
    1.7 to 2.1 V
  • Repetitive Peak Reverse Voltage
    650 V
  • Non-Repetitive Peak Forward Current
    120 A
  • Recovery Time
    76 nS
  • RoHS Compliant
    Yes
  • Temperature operating range
    -40 to 175 Degree C
  • Applications
    AirConditioning PFC, General Purpose Drives (GPD)
  • Package Type
    Through Hole
  • Package
    PG-HSIP247-3

Technical Documents