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MSICSS10120CCE3

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The MSICSS10120CCE3 from Microchip Technology is a Power Diode with Forward Current 10 A, Forward Voltage 1.1 to 1.8 V, Reverse Current 100 to 200 uA, Reverse Voltage 1200 V, Repetitive Peak Reverse Voltage 1200 V. Tags: Surface Mount. More details for MSICSS10120CCE3 can be seen below.

Product Specifications

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Product Details

  • Part Number
    MSICSS10120CCE3
  • Manufacturer
    Microchip Technology
  • Description
    1.1 to 1.8 V Schottky Barrier Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Dual Diode
  • Forward Current
    10 A
  • Forward Voltage
    1.1 to 1.8 V
  • Reverse Current
    100 to 200 uA
  • Reverse Voltage
    1200 V
  • Repetitive Peak Reverse Voltage
    1200 V
  • Peak Reverse Voltage
    1200 V
  • Industry
    Automotive, Commercial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Reverse Breakdown Voltage
    1200 V
  • Applications
    High Forward Surge Capability, High reverse Voltage Capability With very fast switching.
  • Package Type
    Surface Mount
  • Package
    SMD-5
  • Total Capacitance
    1200 pF
View details on the manufacturer's website
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