FFSB0865B-F085

Power Diode by onsemi (1005 more products)

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FFSB0865B-F085 Image

The FFSB0865B-F085 from onsemi is an Automotive Qualified Silicon Carbide Schottky Diode that is ideal for automotive HEV-EV on-board chargers and automotive HEV-EV DC-DC converters applications. The diode has a forward voltage of 1.39 V and a forward current of 8 A. It has a reverse current of less than 40 µA, a repetitive peak reverse voltage of up to 650 V and a non-repetitive peak forward current of 577 A. It offers zero reverse recovery current with temperature-independent switching characteristics, and excellent thermal performance, resulting in high efficiency in a reduced system size and cost. This AEC−Q101-qualified diode is avalanche rated at 33 mJ with high surge current capacity and positive temperature coefficient with a support for easy parallel operations. It also provides other benefits such as faster operating frequency with increased power density and reduced electromagnetic interference (EMI). This RoHS-compliant power diode is available in a surface-mount package that measures 14.6 x 9.65 mm.

Product Specifications

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Product Details

  • Part Number
    FFSB0865B-F085
  • Manufacturer
    onsemi
  • Description
    650 V Automotive Qualified SiC Schottky Diode

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    8 A
  • Forward Voltage
    1.39 V
  • Reverse Current
    40 µA
  • Reverse Voltage
    650 V
  • Repetitive Peak Reverse Voltage
    650 V
  • Non-Repetitive Peak Forward Current
    577 A
  • Industry
    Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    Automotive HEV-EV Onboard Chargers, Automotive HEV-EV DC-DC Converters
  • Dimensions
    14.6 x 9.65 mm
  • Package Type
    Surface Mount
  • Package
    D2PAK

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