The NVDSH50120C from onsemi is a Silicon Carbide Schottky Diode that is ideal for automotive HEV−EV onboard chargers and DC-DC converter applications. It has a forward voltage of up to 1.4 V and a forward current of less than 53 A. This avalanche-tested diode has a reverse voltage of 1200 V. It employs silicon carbide technology that provides superior switching performance and higher reliability compared to silicon diodes. This RoHS-compliant power diode offers numerous benefits such as high surge current capacity, improved efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost. It has zero reverse recovery/forward recovery current which contributes to its faster switching characteristics. This AEC-Q101 qualified power diode has a positive temperature coefficient which allows current sharing in parallel diodes. It is available in a surface-mount package that measures 36.07 x 15.37 mm.