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RFN10BGE3S

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The RFN10BGE3S from ROHM Semiconductor is a Power Diode with Forward Current 10 A, Forward Voltage 1.25 to 1.50 V, Reverse Current 10 uA, Reverse Voltage 350 V, Repetitive Peak Reverse Voltage 350 V. Tags: Surface Mount. More details for RFN10BGE3S can be seen below.

Product Specifications

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Product Details

  • Part Number
    RFN10BGE3S
  • Manufacturer
    ROHM Semiconductor
  • Description
    1.25 to 1.50 V, 10 A, Fast Recovery Diodes

General

  • Types of Diode
    Fast Recovery Diode
  • Configuration of Diode
    Single Diode
  • Forward Current
    10 A
  • Forward Voltage
    1.25 to 1.50 V
  • Reverse Current
    10 uA
  • Reverse Voltage
    350 V
  • Repetitive Peak Reverse Voltage
    350 V
  • Non-Repetitive Peak Forward Current
    80 A
  • Recovery Time
    22 to 30 ns
  • Peak Reverse Voltage
    350 V
  • Industry
    Automotive, Commercial, Industrial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 150 Degree C
  • Reverse Breakdown Voltage
    350 V
  • Applications
    General Rectification
  • Package Type
    Surface Mount
  • Package
    TO-252GE

Technical Documents
View details on the manufacturer's website
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