The RFN1VWM2S from ROHM Semiconductor is an Ultrafast Recovery Diode that is designed for general rectification applications. It has a forward current of 1 A and a forward voltage of 0.85 V. This power diode has a reverse voltage of 200 V and a peak forward surge current of 20 A. It provides low forward voltage, low switching loss, and has high current overload capacity. This diode is fabricated using silicon epitaxial planer structure and is available in a surface mount package that measures 180 x 8 mm.
