RFN2LB6STBR1

Note : Your request will be directed to ROHM Semiconductor.

The RFN2LB6STBR1 from ROHM Semiconductor is a Power Diode with Forward Current 2 A, Forward Voltage 0.9 to 1.65 V, Reverse Current 1 µA, Reverse Voltage 600 V, Repetitive Peak Reverse Voltage 600 V. Tags: Surface Mount. More details for RFN2LB6STBR1 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    RFN2LB6STBR1
  • Manufacturer
    ROHM Semiconductor
  • Description
    600 V, 1 μA Fast Recovery Power Diode

General

  • Types of Diode
    Fast Recovery Diode
  • Configuration of Diode
    Single Diode
  • Technology
    Silicon
  • Forward Current
    2 A
  • Forward Voltage
    0.9 to 1.65 V
  • Reverse Current
    1 µA
  • Reverse Voltage
    600 V
  • Repetitive Peak Reverse Voltage
    600 V
  • Non-Repetitive Peak Forward Current
    35 A
  • Recovery Time
    16 to 35 ns
  • Peak Reverse Voltage
    600 V
  • Industry
    Industrial, Commercial
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 150 Degree C
  • Applications
    General rectification
  • Dimensions
    5.34 x 3.62 mm
  • Package Type
    Surface Mount
  • Package
    DO-214AA(SMB)

Technical Documents