GP3D010A120A

Power Diode by SemiQ

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GP3D010A120A Image

The GP3D010A120A from SemiQ is a SiC Schottky Diode that is ideal for solar inverters, power supplies, motor drives, SMPS, UPS, and EV charging station applications. It has a repetitive peak reverse voltage of up to 1200 V, a forward voltage of 1.49 V, and a forward current of less than 34 A. This SiC Schottky diode operates with zero switching loss, offers higher efficiency, reduces heat dissipation, and requires smaller heat sinks. It also offers zero reverse-recovery current and unipolar rectification with surge current. This avalanche-tested Schottky diode is easy to parallel and provides fast, temperature-independent switching. This RoHS-compliant SiC Schottky diode is available in a through-hole package that measures 9.65 x 26.79 mm.

Product Specifications

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Product Details

  • Part Number
    GP3D010A120A
  • Manufacturer
    SemiQ
  • Description
    1200 V SiC Schottky Diode for EV Charging Applications

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    34 A
  • Forward Voltage
    2.12 V
  • Reverse Current
    39 µA
  • Reverse Voltage
    1200 V
  • Repetitive Peak Reverse Voltage
    1200 V
  • Non-Repetitive Peak Forward Current
    700 A
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Applications
    Solar Inverters, Switch mode power supplies, UPS, Power factor correction, EV charging stations
  • Package Type
    Through Hole
  • Package
    TO-220-2L

Technical Documents