B1D02065E

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The B1D02065E from BASiC Semiconductor is a Silicon Carbide (SiC) Schottky Diode that has been designed for switch mode power supplies (SMPS), uninterruptible power supplies, motor drivers, power factor correction. It has a forward voltage of 1.7 V and a forward current of up to 9 A. This SiC Schottky diode has a reverse current of 1 µA, a repetitive peak reverse voltage of up to 650 V, and a non-repetitive peak forward current of less than 16 A. It offers temperature-independent switching, a positive temperature coefficient on VF, excellent surge current capability, and low capacitive charge. This RoHS-compliant diode has increased power density enabling higher switching frequency, reduction of heat sink requirements, system cost savings due to smaller magnetics, and reduced EMI. It is available in a surface mount package that measures 6.73 x 6.22 x 9.22 mm.

Product Specifications

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Product Details

  • Part Number
    B1D02065E
  • Manufacturer
    BASiC Semiconductor
  • Description
    650 V SiC Schottky Diode for SMPS Applications

General

  • Types of Diode
    Schottky Barrier Diode
  • Configuration of Diode
    Single Diode
  • Technology
    SiC
  • Forward Current
    9 A
  • Forward Voltage
    1.7 V
  • Reverse Current
    1 µA
  • Reverse Voltage
    650 V
  • Repetitive Peak Reverse Voltage
    650 V
  • Non-Repetitive Peak Forward Current
    16 A
  • Industry
    Industrial, Commercial, Automotive
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 175 Degree C
  • Reverse Breakdown Voltage
    650 V
  • Applications
    Switch mode power supplies (SMPS), Uninterruptible power supplies, Motor drivers, Power factor correction
  • Dimensions
    6.73 x 6.22 x 9.22 mm
  • Package Type
    Surface Mount
  • Package
    TO-252-2
  • Total Capacitance
    11.8 to 99 pF

Technical Documents