The TESDL24VB17P1Q1 RNG from Taiwan Semiconductor is a Bi-directional Protection Diode that has been designed to protect sensitive electronic components that are connected to power and control lines from over-voltage damage by electrostatic discharging (ESD) and lightning. It has a reverse breakdown voltage of up to 32.6 V and a reverse leakage current of less than 50 nA. This diode has a clamping voltage of up to 33.7 V and a dynamic resistance of 0.45 ohms. It includes clamping cells that prevent over-voltage events on the control/data/ power lines, protecting any downstream components. This diode provides ESD protection of up to ±30 kV (contact and air discharge) according to IEC61000-4-2 and withstands peak pulse current up to 3 A(8/20 μs) according to IEC61000-4-5. This RoHS-compliant power diode is available in a surface-mount package that measures 1.075 x 0.675 x 0.53 mm and is ideal for general-purpose I/O, power lines on PCB protection, and portable instrumentation applications.