DF2B6.8E

Power Diode by Toshiba (457 more products)

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DF2B6.8E Image

The DF2B6.8E from Toshiba is a Power Diode that has been designed for protection against electrostatic discharge (ESD) events. It has a reverse voltage of up to 7.8 V and a reverse current of less than 500 nA. This AEC-Q101-qualified power diode has a repetitive peak reverse voltage of up to 5 V. It has a power dissipation of up to 150 mW. It has a reverse current of less than 0.5 μA. This RoHS-compliant diode is available in a surface mount package that measures 1.6 x 0.6 x 0.8 mm.

Product Specifications

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Product Details

  • Part Number
    DF2B6.8E
  • Manufacturer
    Toshiba
  • Description
    7.8 V ESD Protection Power Diode

General

  • Types of Diode
    Protection Diode
  • Configuration of Diode
    Dual Diode
  • Reverse Current
    0.5 uA
  • Reverse Voltage
    7.8 V
  • Repetitive Peak Reverse Voltage
    5 V
  • Peak Reverse Voltage
    5.0 V
  • Industry
    Commercial, Industrial, Automotive
  • Qualification
    AEC-Q101
  • RoHS Compliant
    Yes
  • Temperature operating range
    -55 to 150 Degree C
  • Reverse Breakdown Voltage
    5.8 to 7.8 V
  • Applications
    Protection against electrostatic discharge (ESD) events
  • Dimensions
    1.6 x 0.6 x 0.8 mm
  • Package Type
    Surface Mount
  • Package
    SOD-523
  • Total Capacitance
    15 pF

Technical Documents