The TRS2E65H-S1Q from Toshiba is a SiC Schottky Barrier Diode that is ideal for power factor correction, solar inverters, uninterruptible power supplies, and DC-DC converter applications. It has a forward voltage of 1.2 V and an average forward current of up to 9 A. It has a reverse voltage of less than 650 V and a reverse current of 0.2 µA. This power diode has a repetitive peak reverse voltage of up to 650 V and a non-repetitive peak forward current of less than 19 A. This power diode is manufactured using third-generation chip design technology that offers low forward voltage, total capacitive charge, and reverse current as required for low-power, high-efficiency applications. It is available in a through-hole package that measures 28.64 x 10.05 x 4.45 mm.