The global GaN power device market size reached US$ 187.1 Million in 2021. Looking forward, the publisher expects the market to reach US$ 1,157.5 Million by 2027, exhibiting a CAGR of 35.49% during 2021-2027. Keeping in mind the uncertainties of COVID-19, we are continuously tracking and evaluating the direct as well as the indirect influence of the pandemic on different end use industries. These insights are included in the report as a major market contributor.

The gallium nitride (GaN) power device is a high electron mobility (HEMT) transistor that produces electrical energy by the controlling the freely moving electrons in the wide bandgap of the semiconductor. As compared to silicon metal-oxide-semiconductor field-effect transistor (MOSFET), the GaN power device has lower on-resistance, lesser output capacitance and higher electric-field strength. It also conducts more electrons, reduces switch node ringing and increases efficiency. Besides this, it is compact, fast and lightweight, owing to which it is gaining traction in commercial and industrial applications across various industrial products.

The market is presently being driven by the extensive utilization of GaN power devices in various end use industries. For instance, it is used in the lighting and braking control systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs). Governments of several countries are introducing stringent policies on greenhouse gas (GHG) emissions, which is boosting the sales of EVs and HEVs around the world. They are also promoting the adoption of energy-efficient devices, which is further influencing the demand for GaN power devices in the defense and aerospace industries. Apart from this, these devices are utilized in radars to enhance navigation, avoid collision and enable real-time air traffic control. Moreover, they are employed in the manufacturing of healthcare scanning equipment, such as sonograms, magnetic resonance imaging (MRI) and miniaturized X-ray machines, to provide precision while performing surgeries. Furthermore, they are used in small cell, distributed antenna systems (DAS) and remote radio head network densification. Besides this, the increasing adoption of the internet of things (IoT) technology, along with the introduction of 5G technology, is expected to create lucrative opportunities for manufacturers in the coming years.

Key Market Segmentation:

The publisher provides an analysis of the key trends in each sub-segment of the global GaN power device market report, along with forecasts at the global, regional and country level from 2022-2027. Our report has categorized the market based on device type, voltage range, application and end-use industry.

Breakup by Device Type:

• Power Device
• Discrete Power Device
• Integrated Power Device
• RF Power Device
• Discrete RF Power Device
• Integrated RF Power Device

Breakup by Voltage Range:

• < 200 Volt
• 200-600 Volt
• >600 Volt

Breakup by Application:

• Power Drives
• Power Supply Systems
• Radio Frequency Based Systems

Breakup by End-Use Industry:

• Telecommunications
• Automotive
• Renewable Power Generation
• Military
• Aerospace and Defense
• Consumer Electronics
• Others

Breakup by Region:

• North America
• United States
• Canada
• Asia Pacific
• China
• Japan
• India
• South Korea
• Australia
• Indonesia
• Others
• Europe
• Germany
• France
• United Kingdom
• Italy
• Spain
• Russia
• Others
• Latin America
• Brazil
• Mexico
• Others
• Middle East and Africa

Competitive Landscape:

The report has also analyzed the competitive landscape of the market with some of the key players being Efficient Power Conversion, GaN Systems Inc., IQE, Koninklijke Philips N.V., MACOM Technology Solutions, Microsemi Corporation (Microchip Technology Inc.), Mitsubishi Electric Corporation, Navitas Semiconductor Inc., Qorvo Inc., Sumitomo Electric Industries Ltd., Texas Instruments Incorporated, Toshiba Corporation, Wolfspeed Inc. (Cree Inc.), etc.