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MOSFETs - Page 168

18400 MOSFETs from 61 manufacturers meet your specification.
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Isahaya Electronics - INK0302AC1

MOSFET from Isahaya Electronics
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Description:30 V, 2.5 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
75 milli-ohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SC-59
Industry:
Industrial, Commercial
Applications:
Switching
more info
XPHR7904PS Image
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Toshiba - XPHR7904PS

MOSFET from Toshiba
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Description:40 V, 85 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
150 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
0.65 to 1.3 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
170 W
Package:
SOP Advance
Applications:
Automotive, Motor Drivers, Switching Voltage Regul...
more info
FS55MR12W1M1H_B11 Image
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Infineon Technologies - FS55MR12W1M1H_B11

MOSFET from Infineon Technologies
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Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
15 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
52.9 to 114 milliohm
Gate Source Voltage:
-10 to 23 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 125 Degree C
Industry:
Industrial, Commercial
Applications:
High-frequency switching application, DC/DC conver...
more info
SIS590DN-T1-GE3 Image
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Vishay - SIS590DN-T1-GE3

MOSFET from Vishay
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Description:-100 to 100 V, N-Channel, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode, P-Channel Enhancement ...
Transistor Polarity:
N-Channel, P-Channel
Number of Channels:
Dual
Continous Drain Current:
4 A
Drain Source Breakdown Voltage:
-100 to 100 V
Drain Source Resistance:
139 to 338 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.6 to 23.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
DC/DC converters, Active clamp, Brushless DC motor...
more info
STD26P3LLH6 Image
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STMicroelectronics - STD26P3LLH6

MOSFET from STMicroelectronics
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Description:-20 to 20 V, 12 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
12 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
24 to 45 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
DC to 175 Degree C
Package:
DPAK
Applications:
Switching applications, LCC converters, resonant c...
more info
IXTT50P10 Image
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Littelfuse - IXTT50P10

MOSFET from Littelfuse
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Description:-100 V, 140 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-50 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
55 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
300 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-268
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
PSMN1R5-30BLE Image
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Nexperia - PSMN1R5-30BLE

MOSFET from Nexperia
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Description:30 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
120 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
1.3 to 2.9 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
401 W
Temperature operating range:
-55 to 175 Degree C
Package:
D2PAK
Applications:
Electronic fuse, Hot swap, Load switch, Soft start
more info
RJE0620JPD Image
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Renesas - RJE0620JPD

MOSFET from Renesas
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Description:-60 V, , P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-10 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
100 to 180 milliohm
Gate Source Voltage:
-16 to 2.5 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 150 Degree C
Package:
DPAK(S)
Industry:
Automotive
Applications:
Power Switching
more info
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ROHM Semiconductor - RD3G04BBJHRBTL

MOSFET from ROHM Semiconductor
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Description:-40 V, -40 to 40 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-40 to 40 A
Drain Source Breakdown Voltage:
-40 V
Drain Source Resistance:
18.1 to 31.0 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
53 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
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onsemi - NVTFWS8D1N08HTAG

MOSFET from onsemi
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Description:-20 to 20 V, 9 to 23 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
61 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
6.4 to 12.6 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFNW8
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Power switches (High S...
more info
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