MOSFETs - Page 169

18400 MOSFETs from 61 manufacturers meet your specification.
Description:-25 to 25 V, 9.2 to 19.6 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-8.6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
15 to 54 Milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
U-DFN2020-6
Applications:
Battery Management Application, Power Management F...
more info
Description:-8 to 19 V, 54 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
23 to 32 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
75 to 120 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
136 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO 247-3
Applications:
Solar inverters, EV motor drive, High voltage DC/D...
more info
Description:20 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
2.2 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
80 to 150 Milliohm
Gate Source Voltage:
-10 to 10 V
Power Dissipation:
0.54 W
Temperature operating range:
150 Degree C
Package:
WSSMini6-F1
Industry:
Industrial, Commercial
more info
Description:100 V Hermetically-Sealed N-Channel Enhancement Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
38 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
55 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
150 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-3
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:90 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.2 to 0.36 A
Drain Source Breakdown Voltage:
90 V
Drain Source Resistance:
3200 to 6000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.49 to 1.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-89, SOT-23
Industry:
Commercial, Industrial
Applications:
Normally-on switches, Battery operated systems, Co...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
65 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
2.6 to 4 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
75 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN3333
Industry:
Commercial, Industrial
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
220 to 700 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.15 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-363
Industry:
Industrial, Commercial
Applications:
PWM application, Load switch
more info
Description:20 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.5 A
Drain Source Breakdown Voltage:
20 V
Drain Source Resistance:
250 to 850 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.275 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-523
Industry:
Commercial, Industrial
more info
Description:10.6 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Quad
Continous Drain Current:
0.003 to 0.012 A
Drain Source Breakdown Voltage:
10.6 V
Drain Source Resistance:
500000 milliohm
Gate Source Voltage:
10.6 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Ultra low operating voltage, Sub-threshold biased ...
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-0.2 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
3200 to 8000 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
0.35 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-323-3A
Industry:
Commercial, Industrial
Applications:
Switching
more info

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