MOSFETs - Page 170

18400 MOSFETs from 61 manufacturers meet your specification.
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
95 to 140 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
40 W
Temperature operating range:
-55 to 175 Degree C
Package:
TO-252(D-PAK)
Industry:
Commercial, Industrial
Applications:
Power switching application, Hard switched and hig...
more info
Description:-30 to 30 V, 48.0 nC, N-Channel Enhancement Mode, MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 to 18 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
0.22 to 0.27 ohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
236 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220F
Industry:
Commercial, Industrial
Applications:
Power Supply, PFC, Ballast
more info
Description:-60 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
55 to 85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060-8L
Industry:
Commercial, Military
more info
Description:500 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
3 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
2400 to 3000 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
35 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-251
Industry:
Industrial, Commercial
Applications:
Power switch circuit of electron ballast and adapt...
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
10 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
670 to 800 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
85 W
Temperature operating range:
150 Degree C
Package:
FTO-220AG
Industry:
Commercial, Industrial
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
5.3 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
66 to 83 milliohm
Gate Source Voltage:
16 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOIC-8
Industry:
Industrial, Commercial
Applications:
Load/Power switches, Power supply converter circui...
more info
Description:900 V, 72 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
9 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
1130 to 1400 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
89 W
Temperature operating range:
-55 to 150 Degree C
Package:
ITO-220
Industry:
Commercial, Industrial
Applications:
Power Supply, Lighting
more info
Description:40 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
6 to 9 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
31 W
Temperature operating range:
-55 to 150 Degree C
Package:
QFN
Industry:
Commercial, Industrial
Applications:
Power management Units, DC/DC converter, Battery-p...
more info
Description:-140 V, -9.7 to -15 A, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-9.7 to -15 A
Drain Source Breakdown Voltage:
-140 V
Drain Source Resistance:
180 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
89.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-252
Industry:
Industrial, Commercial
more info
Description:1200 V, 12.5 to 19 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
12.5 to 19 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
160 to 290 milli-ohm
Gate Source Voltage:
-10 to 25 V
Temperature operating range:
-55 to 150 Degree C
Package:
SMD 1.0
Industry:
Industrial, Commercial, Military
Applications:
Space equipment and systems, Military equipment an...
more info

Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.