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MOSFETs - Page 176

18400 MOSFETs from 61 manufacturers meet your specification.
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Isahaya Electronics - INK021ABS1

MOSFET from Isahaya Electronics
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Description:100 V, 1.4 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1.4 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
0.2 to 0.35 ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.6 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-92S
Industry:
Industrial, Commercial
Applications:
Switching
more info
TJ30S06M3L Image
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Toshiba - TJ30S06M3L

MOSFET from Toshiba
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Description:-60 V, 80 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-30 A
Drain Source Breakdown Voltage:
-60 V
Drain Source Resistance:
16.8 to 28 Milliohm
Gate Source Voltage:
-20 to 10 V
Power Dissipation:
68 W
Package:
DPAK
Applications:
Automotive, Motor Drivers, DC-DC Converters, Switc...
more info
FS05MR12A6MA1B Image
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Infineon Technologies - FS05MR12A6MA1B

MOSFET from Infineon Technologies
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Description:1200 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
SiC
Transistor Polarity:
N-Channel
Number of Channels:
Hex
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
5.5 to 9.1 milliohm
Gate Source Voltage:
-10 to 20 V
Power Dissipation:
0.02 W
Temperature operating range:
-40 to 125 Degree C
Industry:
Automotive, Industrial, Commercial
Applications:
AutomotiveApplications, HybridElectricalVehicles(H...
more info
SiS447DN-T1-GE3 Image
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Vishay - SiS447DN-T1-GE3

MOSFET from Vishay
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Description:-20 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-18 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
5.8 to 12.5 milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
52 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK 1212-8
Industry:
Industrial, Commercial
Applications:
Battery switch, Load switch, Power management
more info
STW20N90K5 Image
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STMicroelectronics - STW20N90K5

MOSFET from STMicroelectronics
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Description:-30 to 30 V, 40 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
20 A
Drain Source Breakdown Voltage:
900 V
Drain Source Resistance:
210 to 250 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
250 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Applications:
Switching applications
more info
IXTH140P10T Image
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Littelfuse - IXTH140P10T

MOSFET from Littelfuse
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Description:-100 V, 400 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-140 A
Drain Source Breakdown Voltage:
-100 V
Drain Source Resistance:
10 milliohm
Gate Source Voltage:
-15 to 15 V
Power Dissipation:
568 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
PSMN1R5-50YLH Image
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Nexperia - PSMN1R5-50YLH

MOSFET from Nexperia
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Description:50 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
200 A
Drain Source Breakdown Voltage:
50 V
Drain Source Resistance:
1.4 to 4.02 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
333 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56E
Applications:
Brushless DC motor control, Synchronous rectifier ...
more info
RQJ0304DQDQS Image
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Renesas - RQJ0304DQDQS

MOSFET from Renesas
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Description:-30 V, 1.9 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-2.6 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
195 to 420 milliohm
Gate Source Voltage:
-12 to 8 V
Power Dissipation:
1.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
UPAK
Industry:
Commercial, Industrial
Applications:
Power Switching
more info
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ROHM Semiconductor - RS7E200BGTB1

MOSFET from ROHM Semiconductor
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Description:30 V, -390 to 390 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-390 to 390 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
0.53 to 1.06 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
3 to 180 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060-8S
Industry:
Industrial, Commercial
Applications:
Switching, Motor drives, DC/DC converter
more info
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onsemi - NVTFS6H854NLTAG

MOSFET from onsemi
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Description:-20 to 20 V, 8 to 17 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
41 A
Drain Source Breakdown Voltage:
80 V
Drain Source Resistance:
11.1 to 17.3 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
54 W
Temperature operating range:
-55 to 175 Degree C
Package:
WDFN-8
Industry:
Automotive, Commercial, Industrial
Applications:
Switching power supplies, Power switches (High Sid...
more info
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