MOSFETs - Page 177

18400 MOSFETs from 61 manufacturers meet your specification.
Description:-20 to 20 V, 4 to 7.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
56 to 120 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.08 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Power management functions, Analog Switch, Load Sw...
more info
Description:-8 to 19 V, 211 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
85 to 115 A
Drain Source Breakdown Voltage:
1200 V
Drain Source Resistance:
11.2 to 28.8 Milliohm
Gate Source Voltage:
-8 to 19 V
Power Dissipation:
556 W
Temperature operating range:
-40 to 175 Degree C
Package:
TO 247-4
Applications:
Solar inverters, EV motor drive, High voltage DC/D...
more info
Description:60 V, N-Channel Depletion Mode MOSFET
Types of MOSFET:
N-Channel Depletion Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.1 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
6000 to 15000 Milliohm
Gate Source Voltage:
-12 to 12 V
Power Dissipation:
0.15 W
Temperature operating range:
150 Degree C
Package:
SOT-353
Industry:
Industrial, Commercial
more info
Description:100 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
0.43 A
Drain Source Breakdown Voltage:
100 V
Drain Source Resistance:
1200 to 12000 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
2.5 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-39
Industry:
Space, Industrial, Commercial
Applications:
Various Aerospace and Space
more info
Description:600 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Technology:
Silicon
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
73 A
Drain Source Breakdown Voltage:
600 V
Drain Source Resistance:
75 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
893 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-264 MAX
Industry:
Commercial, Military
more info
Description:500 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
11 A
Drain Source Breakdown Voltage:
500 V
Drain Source Resistance:
350 to 380 milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
83 W
Temperature operating range:
-55 to 150 Degree C
Package:
DFN5060
Industry:
Commercial, Industrial
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-4.1 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
36 to 65 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.2 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23
Industry:
Industrial, Commercial
Applications:
Power switching application, Uninterruptible power...
more info
Description:-30 V, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-15 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
7.7 to 40 milliohm
Gate Source Voltage:
-25 to 25 V
Power Dissipation:
3.1 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOP-8
Industry:
Commercial, Industrial
more info
Description:10.6 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Dual
Continous Drain Current:
0.003 to 0.012 A
Drain Source Breakdown Voltage:
10.6 V
Drain Source Resistance:
500000 milliohm
Gate Source Voltage:
10.6 V
Power Dissipation:
0.5 W
Temperature operating range:
0 to 70 Degree C
Package:
Plastic Dip
Industry:
Commercial, Industrial
Applications:
Precision current mirrors, Precision current sourc...
more info
Description:60 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
1 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
180 to 330 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
0.4 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT-23(TO-236)
Industry:
Commercial, Industrial
Applications:
Switching
more info

Filters

Industry

Manufacturers

More

Types of MOSFET

Technology

Transistor Polarity

Number of Channels

Continous Drain Current

Apply

Drain Source Breakdown Voltage

Apply

Channel Configuration

Drain Source Resistance

Apply

Gate Source Voltage

Apply

Gate Charge

Apply

Power Dissipation

Apply

RoHS Compliant

Qualification

Package Type

Need Help Finding a Product?

Looking for a Product or Supplier?

Let us know what you need, we can help find products that meet your requirement.

Looking for ?

from listed on everything PE.

Please Wait...
Select specs based on what you need.