MOSFETs - Page 184

18400 MOSFETs from 61 manufacturers meet your specification.
Description:950 V N-Channel Enhancement Mode Power MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
17.5 A
Drain Source Breakdown Voltage:
950 V
Drain Source Resistance:
310 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
125 W
Temperature operating range:
-55 to 150 degree C
Package:
PG-TO263-3
Industry:
Commercial, Industrial
Applications:
Suitable for hard & soft switching topologies, Opt...
more info
Description:30 V, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
45.5 A
Drain Source Breakdown Voltage:
30 V
Drain Source Resistance:
5.4 to 10 milliohm
Gate Source Voltage:
-16 to 20 V
Power Dissipation:
25 W
Temperature operating range:
-55 to 150 Degree C
Package:
PowerPAK SO-8
Industry:
Industrial, Commercial
Applications:
DC/DC conversion, Battery protection, Load switchi...
more info
Description:-30 to 30 V, 12 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
7 A
Drain Source Breakdown Voltage:
800 V
Drain Source Resistance:
730 to 900 Milliohm
Gate Source Voltage:
-30 to 30 V
Power Dissipation:
110 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-220
Applications:
Switching applications
more info
Description:-200 V, 103 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-48 A
Drain Source Breakdown Voltage:
-200 V
Drain Source Resistance:
85 milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
462 W
Temperature operating range:
-55 to 150 Degree C
Package:
TO-247
Industry:
Commercial, Industrial
Applications:
High-Side Switches, Push Pull Amplifiers, DC Chopp...
more info
Description:40 V, N-Channel MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
167 to 200 A
Drain Source Breakdown Voltage:
40 V
Drain Source Resistance:
1.5 to 4.5 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
194 W
Temperature operating range:
-55 to 175 Degree C
Package:
LFPAK56
Applications:
High-performance synchronous rectification, DC-to-...
more info
Description:-20 V, 8.1 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-6 to 6 A
Drain Source Breakdown Voltage:
-20 V
Drain Source Resistance:
42 to 107 milliohm
Gate Source Voltage:
-8 to 8 V
Power Dissipation:
2 W
Temperature operating range:
-55 to 150 Degree C
Package:
TMM
Industry:
Commercial, Industrial
more info
Description:60 V, -80 to 80 A, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
-80 to 80 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
4.1 to 7.2 milli-ohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
96 W
Temperature operating range:
-55 to 175 Degree C
Package:
DPAK
Industry:
Industrial, Commercial, Automotive
more info
Description:-20 to 20 V, 2.5 to 5 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
25 A
Drain Source Breakdown Voltage:
60 V
Drain Source Resistance:
18 to 31.5 mohms
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
28 W
Temperature operating range:
-55 to 175 Degree C
Package:
DFN5
Industry:
Automotive, Commercial, Industrial
Applications:
Reverse Battery protection, Switching power suppli...
more info
Description:-20 to 20 V, 4 to 7.8 nC, P-Channel Enhancement Mode MOSFET
Types of MOSFET:
P-Channel Enhancement Mode
Transistor Polarity:
P-Channel
Number of Channels:
Single
Continous Drain Current:
-3.8 A
Drain Source Breakdown Voltage:
-30 V
Drain Source Resistance:
56 to 120 Milliohm
Gate Source Voltage:
-20 to 20 V
Power Dissipation:
1.08 W
Temperature operating range:
-55 to 150 Degree C
Package:
SOT23
Applications:
Power management functions, Analog Switch, Load Sw...
more info
Description:-10 to 25 V, 188 nC, N-Channel Enhancement Mode MOSFET
Types of MOSFET:
N-Channel Enhancement Mode
Transistor Polarity:
N-Channel
Number of Channels:
Single
Continous Drain Current:
48 to 72 A
Drain Source Breakdown Voltage:
1700 V
Drain Source Resistance:
45 to 90 Milliohm
Gate Source Voltage:
-10 to 25 V
Power Dissipation:
520 W
Temperature operating range:
-40 to 150 Degree C
Package:
TO-247-4 Plus
Applications:
Solar Inverters, Switch Mode Power Supplies, High ...
more info

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