This webinar discusses the advantages of gallium nitride (GaN), a mechanically stable wide-bandgap semiconductor. GaN-based power devices, with their higher breakdown strength, faster switching speed, enhanced thermal conductivity, and lower on-resistance, outperform their silicon-based counterparts. The lower resistance and gate charge facilitate faster power supply switching frequencies, leading to increased power densities, higher efficiencies, and more compact, lighter-weight circuitry for crucial spaceborne missions. Furthermore, GaN's inherent radiation tolerance makes it a dependable choice for space applications.