GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties over silicon devices, such as excellent high-frequency characteristics. The surge in IoT devices has ignited an urgent need for more efficient and compact power solutions. GaN technology is at the forefront of meeting this challenge.

Join Kengo Ohmori as he delves into the world of high-voltage GaN HEMTs. Discover how ROHM's EcoGaN™ devices outperform traditional silicon options, delivering exceptional switching characteristics and lower on-resistance.

Learn about:

1. The impact of GaN on power consumption and component size

2. ROHM's cutting-edge 650V GaN HEMT technology

3. Control IC solutions for optimizing GaN performance

4. Don't miss this opportunity to gain valuable insights into the future of power systems.