The webinar discovers more about technological positioning of silicon versus SiC and GaN power devices for both high and low power applications.

• The characteristics of latest silicon-based superjunction technology, SiC MOSFETs and GaN HEMTs.
• The 600V/650V voltage classes where all three technologies co-exist.
• Presented use cases e.g. telecom and servers.
• Topologies and control schemes in which wide bandgap devices can be used in the most beneficial way in comparison to the next best silicon-based alternative.