Paralleling semiconductor devices is an effective and simple way for higher power application. It is very challenging to parallel GaN HEMTs in hard-switching bridge power converter application, especially for discrete leaded package devices. However, leaded packages are still dominant in industrial applications because of their simplicity for PCB assembly and capability for a wide variety of heat-sinking techniques. In this paper, a solution to paralleling GaN HEMTs for diode-free bridge power converters is proposed, and GaN device driver design is discussed.