Up until recently silicon has been the main material used in power electronics, and although silicon technology continues to improve, it does present certain limitations in continuing to meet the growing demands placed on power conversion systems. Work in the past decade has shown that wide bandgap (WBG) materials such as Silicon Carbide (SiC) and gallium nitride (GaN) can serve as the foundation of the next-generation of power semiconductor devices. This paper will focus on the latest type of SiC device, the MOSFET. It will present SiC device characteristics and what benefits this breakthrough technology delivers for power systems.