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Performance Evaluations of Hard-Switching Interleaved DC-DC Boost Converter with New Generation Silicon Carbide MOSFETs

This whitepaper presents a 1200 V, 20 A SiC true MOSFET used in a 10 kW hard-switching interleaved boost converter with high switching frequency up to 100 kHz. It compares thermal and efficiency with Silicon high speed H3 IGBT.
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