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  3. GaNSense Half-Bridge Integration Accelerates the Power-Electronics Revolution

GaNSense Half-Bridge Integration Accelerates the Power-Electronics Revolution

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  • Author: Stephen Oliver
Five years into the second revolution in power semiconductorsi, gallium-nitride-(GaN)-based mobile fast-chargers dominate flagship smartphone and laptop models, taking market share from legacy power silicon chips. This next-generation ‘wide band-gap’ technology is cascading into mainstream mobile applications and simultaneously breaking-out from that beachhead market, into higher-power consumer, solar, data centers and EVsii.
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