This whitepaper describes the main features of Cambridge GaN Devices’ (CGD) Integrated Circuit Enhancement-mode Gallium Nitride (ICeGaN) HEMT and outlines the key considerations a design engineer should take when implementing a CGD ICeGaN transistor in their design. This whitepaper will explain the key differences between ICeGaN and discrete GaN transistors, and how to make use of these differences to create simpler, more efficient and high-power density power converters. 

This whitepaper is aimed at design engineers with switch mode power supply (SMPS) design experience, and assumes the reader is familiar with the use of MOSFETs or IGBTs in power conversion applications.