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Advanced gate drive options for silicon carbide (SiC) MOSFETs using EiceDRIVER

These gate driver IC families provide galvanic isolation based on a coreless transformer, or junction isolation based on silicon-on-insulator. Power transistors rated up to 2300 V with ultrafast switching capability can be handled optimally through these gate drivers. Therefore, this document concentrates mainly on suitable levelshift (1200 V) and galvanically isolated gate driver ICs (2300 V).
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