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Using Enhancement Mode GaN-on-Silicon Power FETs

Efficient Power Conversion Corporation’s hyper-fast enhancement mode Gallium Nitride power transistors offer performance improvements well beyond the realm of silicon-based power MOSFETs. Using eGaN FETs is very similar to using modern power MOSFETs. However, due to the significantly better performance, there are additional design and test considerations to make certain devices are used efficiently and reliably.
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