Navitas Semiconductor, an industry leader in gallium nitride (GaN) power integrated circuits has announced that its GaNFast technology has been selected for Samsung’s flagship Galaxy S22 Ultra and S22+ smartphones. The small, powerful 45 W Super Fast charger has the highest power density of any Samsung charger, enabled by GaNFast power ICs.

The S22 Ultra, with a 6.8” screen and 5,000 mAh battery, and the S22+ are the latest-generation flagship smartphones from Samsung. The GaNFast 45 W charger (EP-T4510) delivers fast-charging power across the complete USB-PD and PPS specifications. Measuring only 47.4 x 27.9 x 43.6 mm the new Samsung fast charger achieves a power density of over 1 W/cc.

GaN is a next-generation semiconductor technology that runs up to 20 x faster than legacy silicon chips. Navitas’ proprietary GaN power ICs integrate GaN power (FET) and GaN drive plus control and protection in a single SMT package. The result is easy-to-use, high-speed, high-performance ‘digital-in, power-out building blocks that deliver up to 3 x faster charging in half the size and weight, and with up to 40% energy savings compared with earlier silicon solutions.

“Samsung customers appreciate leading-edge technology with innovation, performance, and quality,” said Gene Sheridan, CEO, and co-founder of Navitas. “Samsung and Navitas are aligned in providing next-generation performance while ensuring a focus on efficiency and sustainability. GaN delivers significant benefits to the planet – for every GaNFast power IC shipped reduces CO2 emissions by 4 kg.”

Click here to learn more about Navitas' GaN products