SemiQ, a global leader in silicon carbide (SiC) solutions, has introduced a new family of 1200V SiC full-bridge modules. Each module integrates two of SemiQ’s robust high-speed switching SiC MOSFETs with a reliable body diode, ensuring ultra-efficient performance in high-voltage applications.
The modules have been developed to simplify the development of photovoltaic inverters, energy storage, battery charging and other high-frequency DC applications. Available in 18, 38 and 77 mΩ (RDSon) variants, the modules have been tested at voltages exceeding 1350 V and deliver a continuous drain current of up to 102 A, a pulsed drain current of up to 250A and a power dissipation of up to 333 W.
Operational with a junction temperature of up to 175oC, the rugged B2 modules have exceptionally low switching losses (EON 0.13mJ, EOFF 0.04 mJ at 25oC – 77 mΩ module), low zero-gate voltage drain/gate-source leakage (0.1 µA/1 nA – all modules) and low junction to case thermal resistance (0.4oC per watt – 18 mΩ module).
“By integrating high-speed SiC MOSFETs with exceptional performance and reliability, our new QSiC 1200 V family of full-bridge modules sets a new standard for power density and efficiency in demanding DC applications. This family of modules simplifies system design, and enables faster time-to-market for next-generation solar, storage, and charging solutions,” said Seok Joo Jang, Director of Module Engineering at SemiQ.
Available immediately, the modules can be mounted directly to a heat sink, and are housed in a 62.8 x 33.8 x 15.0 mm package (including mounting plates) with press-fit terminal connections and split DC negative terminals.
Click here to learn more about SemiQ’s 1200V SiC full-bridge modules: GCMX020A120B2H2P/GCMX080A120B2H2P.
