ROHM has unveiled the BST500D08P4A104, a half-bridge module consisting of SiC-MOSFETs, suitable for automotive applications, inverters, converters, and (hybrid) electrical vehicles EV/HEV. This newly launched power module has a drain-source voltage of 750 V and a drain current of 506 A. It has a power dissipation of 1667 W and can withstand a junction temperature of up to 175^oC. This half-bridge module measures 41.6 x 52.5 mm.

Features of BST500D08P4A104

• TRCDRIVE pack with the 4^th Generation SiC-MOSFET
• V_DSS = 750V
• Low R_DS(on)
• High-speed switching possible
• Low switching losses
• Low stray inductance - 5.7nH
• Tvjmax = 175?
• Compact design
• High power density
• Press-fit contact technology
• Integrated NTC temperature sensor
• Mountable on heatsink with thermal interface material (TIM)
• Weldable power terminals
• Cu clip technology
• Ag sinter technology for die mounting
• Higher power cycling capability
• 4.2 kV DC 1s insulation

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