Infineon Technologies has announced the launch of its latest high-performance gallium nitride (GaN) transistors, the CoolGaN G3 series. The new lineup includes the 100V transistor (IGD015S10S1) housed in an RQFN 5x6 package and the 80V transistor (IGE033S08S1) in an RQFN 3.3x3.3 package. Gallium Nitride (GaN) technology plays a crucial role in enabling power electronics to reach the highest levels of performance. However, GaN suppliers have thus far taken different approaches to package types and sizes, leading to fragmentation and the lack of multiple footprint-compatible sources for customers.

“The new devices are compatible with industry-standard silicon MOSFET packages, meeting customer demands for a standardized footprint, easier handling, and faster-time-to-market,” said, Dr. Antoine Jalabert, Product Line Head for mid-voltage GaN at Infineon.

The CoolGaN G3 100 V transistor devices will be available in a 5 x 6 RQFN package with a typical on-resistance of 1.1 mΩ. Additionally, the 80 V transistor in a 3.3 x 3.3 RQFN package has a typical resistance of 2.3 mΩ. These transistors offer a footprint that, for the first time, allows for easy multi-sourcing strategies and complementary layouts to Silicon-based designs. The new packages in combination with GaN offer a low-resistance connection and low parasitics, enabling high-performance transistor output in a familiar footprint.

Moreover, this chip and package combination allows for a high level of robustness in terms of thermal cycling, in addition to improved thermal conductivity, as heat is better distributed and dissipated due to the larger exposed surface area and higher copper density.

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