Efficient Power Conversion (EPC) has announced the EPC2070, a 100 V GaN transistor with a maximum RDS(on) of 23 mOhm and a 34 A pulsed output current for high efficiency power conversion in a tiny 1.1 mm2 footprint.
Applications demanding higher efficiency and power density no longer have to choose between size and performance. In addition, the low cost of the EPC2070 brings the performance of GaN FETs at a price comparable to silicon MOSFETs. Applications benefiting from this performance, small size, and low cost include 48 V input power converters up to 60 W for computing and telecom systems, time of flight (ToF) modules using VSCEL lasers for camera modules, laptops and smart phones, LED Lighting, and Class-D audio.
“The ability of eGaN based power devices to operate efficiently at high frequency widens the performance and cost gap with silicon. The 100 V, EPC2070, is a great addition to our 5th generation family of products offering designers the ability to go to higher power densities than what is possible with silicon MOSFETs.” said Alex Lidow, CEO at EPC.
EPC90141 Development Board
The EPC90141 development board is a 100 V maximum device voltage half bridge with onboard gate drives, featuring the EPC2070 eGaN FETs. This 2 x 2 inches (50.8 x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation of the EPC2070.
Click here to learn more about the EPC2070 GaN Transistor.
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