PANJIT Semiconductor launches the latest family of 650 V and 1200 V SiC Schottky Barrier Diodes, which provide superior switching performance and higher reliability over silicon-based devices. PANJIT Semiconductor's newly released product family of 650 V and 1200 V SiC diodes are packaged into through-hole type TO-220AC?TO-263?TO-252AA and newly added TO-247AD-2LD/3LD package while the current ratings are ranged from 4 Amperes(A) to 40 Amperes (A).
PANJIT’s SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, temperature independent switching behavior, high surge current capability, and excellent thermal performance. In addition, silicon carbide technology can provide lower conduction losses and deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.
The new SiC Schottky Barrier Diodes are aimed for engineers designing power conversion circuits for various applications including PV inverters, EV charging pile, industrial motor, telecom and server power supplies, and home appliance where they are facing challenges to deliver smaller footprints at higher system efficiencies. PANJIT Semiconductor offers 650V and 1200V SiC Diode as the ideal solution for next-generation power system designs.
Key features
- Low conduction loss
- Zero reverse recovery
- Temperature independent switching
- High surge current capability
- High ruggedness
- High junction temperature 175°C
Key applications
- Power System: Server power, telecom power, and PC Power
- Green Energy: PV Inverter, and ESS/BMS
- Industrial: EV Charging Pile, UPS , and Industrial Motor
- Home appliances
