Navitas Semiconductor, an industry leader in gallium nitride (GaN) power integrated circuits (ICs), has announced that Gene Sheridan, the company’s CEO and co-founder, will be a plenary speaker at this year’s International Conference on Semiconductor Manufacturing Technology (CS MANTECH).
Taking place in Monterey, California from May 9 to May 12, the 36th CS MANTECH event brings together around 450 participants from different sectors of the semiconductor supply chain and comprises technical papers, talks, workshops, ‘fireside chats’ and manufacturer exhibits.
Gene Sheridan will deliver his in-person plenary presentation, entitled ‘GaN’s expected Impact on the Power Electronics Industry to Electrify Our World’ at 9.15 am PDT on May 10th. The presentation will look at how wide-bandgap (WBG) technologies are set to displace a significant portion of silicon power devices over the next decade and consider the significant market opportunities, challenges, and impacts for GaN to participate in and accelerate the transition from fossil fuels to electrical energy.
“It is a great honor to be invited to deliver a plenary talk at CS MANTECH,” said Gene. “The event is the perfect opportunity to highlight how next-generation WBG power technologies, such as GaN and Silicon Carbide (SiC), will play an essential role across all major segments to significantly improve energy efficiency, reduce global CO2 emissions, and achieve our global environmental sustainability goals to ‘Electrify our World’”.
Martin Kuball, the 2022 CS MANTECH Technical Program Chairman, adds: “Members of the compound semiconductor manufacturing community are increasingly working with next-generation, wide bandgap materials and are keen to find out more about the role of GaN in the ecosystem. This presentation will give the community insight into the opportunities that lie ahead for widespread GaN adoption.”
Navitas’ GaNFast power ICs integrate GaN power and drive plus protection and control to deliver simple, small, fast, and efficient performance. The latest generation of GaNFast ICs with GaNSense technology integrates critical, real-time, autonomous sensing and protection circuits which further improves Navitas’ industry-leading reliability and robustness.
Due to advanced-material performance and Navitas’ proprietary AllGaN process design kit, GaN power ICs are much smaller than silicon chips and have a 4 x to 10 x lower CO2 footprint to manufacture and ship. Additionally, due to their superior level of performance, higher system efficiencies can be achieved to significantly reduce wasted electrical energy and CO2 emissions. In data centers, GaN has the potential to save over 10 million tons of CO2/year through increased efficiency. For electric vehicles (EV), it is estimated that an upgrade from silicon to GaN in on-board chargers (OBCs), DC-DC converters, and traction drive inverters, could accelerate the worldwide transition from internal combustion engines to EVs by 3 years, and reduce total road-sector emissions by 20% per year.
With over 40 million devices shipped and no GaN-related field failures, Navitas GaN is proven in the high-end fast charger market. This technology is now available with a 20-year warranty - a critical accelerator for GaN’s adoption in the data center, industrial automation, solar, and EV markets.
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