Infineon develops 600 V GaN Power Transistor for power efficiency and reliability. The IGOT60R070D1 CoolGaN 600 V enhancement mode power transistor offers fast turn-on and turn-off speed, minimum switching losses, and enables simple half-bridge topologies with the highest efficiency.
The gallium nitride CoolGaN 600 V series is qualified according to a comprehensive GaN-tailored qualification well beyond existing standards. It addresses datacom and server SMPS, telecom as well as adapter, charger, wireless charging, and numerous other applications that demand the highest efficiency or power density.
Key features
- Enhancement mode transistor, normally OFF switch
- Ultra-fast switching
- No reverse-recovery charge
- Capable of reverse conduction
- Low gate charge, low output charge
- Superior commutation ruggedness
- Qualified for industrial applications according to JEDEC standards (JESD47 and JESD22)
Key benefits
- Improves system efficiency
- Improves power density
- Enables higher operating frequency
- System cost reduction savings
- Reduces EMI
Key specificationsKey applications
- Industrial
- Telecom
- Datacenter SMPS based on the half-bridge topology
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