Navitas Semiconductor, an industry leader in gallium nitride (GaN) power integrated circuits, has announced its participation in the TSMC 2022 North America Technology Symposium on June 16, 2022, in Santa Clara, USA.

GaN is a next-generation power semiconductor technology running 20 times faster than traditional silicon. Compared with traditional silicon chargers, gallium nitride chargers can achieve 3x the power or 3x faster charge with up to 40% energy savings in just half the size and weight of legacy silicon solutions. GaNFast power ICs with GaNSense technology integrate GaN power with drive, control, protection, and sensing to enable faster charging higher power density, and greater energy savings for mobile, consumer, enterprise, eMobility, and new-energy markets.

"GaN semiconductors are becoming increasingly important for fast charging and power conversion that drive energy efficiency to the next level,” said Lucas Tsai, director of market development and emerging business management, TSMC North America. “We’re very pleased with the results of our long-term partnership with Navitas in the delivery of high-quality, reliable GaN semiconductors using our industry-leading GaN manufacturing technology and platform, and we look forward to our continuous collaboration with Navitas to unleash more green and sustainable innovations.”

At the TSMC 2022 NA Technology Symposium, Navitas will demonstrate its GaN fast and ultra-fast mobile charging, plus display higher-power system hardware including data center and EV applications at its booth in the Innovation Zone, which spotlights the achievements of TSMC’s emerging startup customers.

“Navitas’ partnership with TSMC goes back over a decade, and for me, long before that,” said Dan Kinzer, Navitas COO/CTO, and co-founder. “Excellent teamwork, learning, and collaboration have created a proven, high-yielding platform on which Navitas can build next-generation GaNFast power ICs via GaN-on-Si fabricated by TSMC.”