EPC has announced the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 A pulsed, rad-hard GaN FET in a small 6.56 square millimeter footprint. It has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/square centimeter). The EPC7004, along with the rest of the Rad Hard family, EPC7014, EPC7007, EPC7019, and EPC7018, are offered in a chip-scale package, the same as the commercial eGaN FET and IC family. Packaged versions will be available from EPC Space.

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and very low on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions. GaN devices also support higher total radiation levels and SEE LET levels than silicon solutions.

The EPC7004 joins a family of rad-hard products that range from 40 V to 200 V offering significant electrical and radiation performance benefits for applications including DC-DC power, motor drives, lidar, deep probes, and ion thrusters for space applications, satellites, and avionics.

“The 100 V EPC7018 and EPC7004 offer designers different size/power tradeoffs with ultra-low on-resistance enabling a new generation of power conversion and motor drives in space operating at higher frequencies, higher efficiencies, and greater power densities than ever achievable before”, said Alex Lidow, CEO, and co-founder of EPC.

Availability

The EPC7004 is available for engineering sampling and will be fully qualified for volume shipments in December 2022.

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